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Raman spectral study on the thermal stability of Ni/Zr/Ni/Si and Ni/Co/Ni/Si structures
Author(s) -
Shao Jia,
Lu Jianzheng,
Huang Wei,
Gao Yuzhi,
Zhang Lichun,
Zhang ShuLin
Publication year - 2006
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1535
Subject(s) - raman spectroscopy , materials science , thermal stability , silicide , nickel , nanowire , semiconductor , thermal , structural stability , metal , nanotechnology , optoelectronics , metallurgy , silicon , chemical engineering , optics , engineering , physics , meteorology , structural engineering
Nickel silicide is becoming an important candidate material for the future generation of complementary metal‐oxide semiconductor (CMOS) devices and nanowire hetero‐structures. The Raman spectral measurement demonstrates quickly and nondestructively that instead of the more expensive Ni(Pt)Si sandwich structure, a new Ni/Zr/Ni/Si structure can raise the temperature of thermal stability from 650 °C to above 800 °C, thereby helping to improve device technology. Copyright © 2006 John Wiley & Sons, Ltd.