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Compositional dependence of the Raman lineshapes in GaS x Se 1− x layered mixed crystals
Author(s) -
Gasanly N. M.
Publication year - 2005
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1375
Subject(s) - raman spectroscopy , laser linewidth , asymmetry , crystal (programming language) , materials science , chemistry , shear (geology) , spectral line , range (aeronautics) , analytical chemistry (journal) , molecular physics , condensed matter physics , optics , physics , composite material , laser , chromatography , quantum mechanics , astronomy , computer science , programming language
The Raman spectra of GaS x Se 1− x layered mixed crystals were studied for a wide range of composition (0 ≤ x ≤ 1) at 300 and 10 K. The effect of crystal disorder on the linewidth broadening of shear and compressional modes is discussed. The asymmetry in the Raman lineshape was analyzed for intralayer modes exhibiting one‐mode behavior. Copyright © 2005 John Wiley & Sons, Ltd.