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Raman characterization of an operating InAlAs—InGaAs—InP high electronic mobility transistor
Author(s) -
Matrullo N.,
Constant M.,
Sagon G.,
Fauquembergue R.,
Leroy A.
Publication year - 1995
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250260209
Subject(s) - raman spectroscopy , high electron mobility transistor , heterojunction , raman scattering , materials science , optoelectronics , electron mobility , transistor , phonon , fermi gas , electron , analytical chemistry (journal) , molecular physics , chemistry , condensed matter physics , optics , electrical engineering , physics , voltage , quantum mechanics , chromatography , engineering
Abstract Raman scattering was used to probe electronic properties in In‐based structures. First, Raman signatures of undoped and doped InAlAs and InGaAs bulk materials and Raman spectra of InAlAs—InGaAs heterostructures were recorded. Raman scattering by coupled longitudinal optic phonons and two‐dimensional electron gas provides a powerful probe of electronic properties in this structure. More precisely, Raman results allowed information to be obtained on the two‐dimensional gas electron carrier concentration. Then, a specific advantage of the micro‐Raman method was demonstrated by the observation of the carrier concentration the vicinity of the gate of an operating high electronic mobility transistor (HEMT). Qualitative variations of carrier concentration in the two‐dimensional electron gas were observed and compared successfully with carrier concentration calculations using Monte Carlo simulations.

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