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Micro‐Raman study of ion‐irradiated oxidized silicon surfaces
Author(s) -
Tripathi R.,
Kar S.,
Bist H. D.
Publication year - 1993
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250241002
Subject(s) - raman spectroscopy , silicon , ion beam , ion , irradiation , materials science , depolymerization , silicon oxide , analytical chemistry (journal) , ion beam deposition , chemistry , optoelectronics , optics , silicon nitride , physics , organic chemistry , chromatography , nuclear physics , polymer chemistry
Micro‐Raman studies were performed on ion‐irradiated oxidized silicon surfaces with different ion energies, ion fluences and subsequent hydrogenation to determine the efficacy and sensitivity for obtaining information on the degree of ion beam‐induced damage in very thin ( ca. 100 Å) layers of silicon subsurface and the top oxide. The variations in the Raman spectra were interpreted in terms of the degree of amorphization produced in the silicon sub‐surface by the ion beam and depolymerization of the top SiO 2 layer.