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Resonance Raman spectra of a Langmuir–Blodgett film of substituted copper phthalocyanine on n‐type silicon
Author(s) -
McConnell A. A.,
Smith W. E.
Publication year - 1989
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250200107
Subject(s) - langmuir–blodgett film , raman spectroscopy , silicon , raman scattering , phthalocyanine , resonance (particle physics) , excitation , copper , materials science , x ray raman scattering , crystallite , analytical chemistry (journal) , chemistry , crystallography , optics , optoelectronics , atomic physics , nanotechnology , organic chemistry , monolayer , metallurgy , physics , quantum mechanics
Resonance Raman excitation profiles for a substituted phthalocyanine dispersed as a polycrystalline powder in a silver disc were compared with those for a Langmuir–Blodgett (LB) multilayer of the same material on a silicon surface. There is a strong angular dependence of the efficiency of the scattering process. The LB profiles are strongly influenced by the electronic fields from the smooth semiconducting silicon surface, which gives rise to increased π‐π* energy separation and comparatively efficient scattering from upper vibronic states.