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Raman scattering tensor elements for some a g modes of anthracene
Author(s) -
Bree A.,
Zwarich R.
Publication year - 1987
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250180108
Subject(s) - anthracene , excited state , raman scattering , resonance (particle physics) , chemistry , excitation , raman spectroscopy , scattering , tensor (intrinsic definition) , x ray raman scattering , atomic physics , molecular physics , physics , optics , photochemistry , quantum mechanics , pure mathematics , mathematics
The intensities of the Raman lines of anthracene in solution and in the pure crystal at room temperature have been measured using several excitation frequencies (ν 0 ) in the pre‐resonance region. The data were used to derive molecular scattering elements α ii at each ν o for a number of a g fundamentals. While the values of α xx and α yy are constant over the restricted range of excitation used, α zz shows an enhancement as ν o moves towards resonance with the first absorption system (I). Overlap factors were determined from the fluorescence spectrum of anthracene in a biphenyl matrix, and these values were used to calculate the contribution α zz (I) due to scattering off the first excited electronic state. Working beyond the oriented‐gas assumption improved the fit between calculated and observed enhancement. There is a measurable background contribution to α zz due to scattering off higher excited states and this has an opposite algebraic sign from α zz (I) for all a g fundamentals except possibly for the 394 cm −1 mode.