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Raman scattering from excitons and from photoexcited electrons and holes
Author(s) -
Scott J. F.,
Toms D. J.
Publication year - 1981
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250100121
Subject(s) - raman spectroscopy , exciton , raman scattering , x ray raman scattering , electron , excitation , atomic electron transition , atomic physics , chemistry , excited state , scattering , spectroscopy , molecular physics , materials science , condensed matter physics , physics , spectral line , optics , quantum mechanics , astronomy
Raman spectroscopy has been performed on a variety of ‘hot’ photoexcited electron systems. In p ‐type ZnTe large densities of photoexcited electrons can be produced in a steady‐state fashion with only milliwatts of laser excitation well below the bandgap. Spin‐flip Raman scattering from these photoexcited minority carriers is easily detected and is in fact often more intense than the majority carrier transitions. In addition, ‘hot’ hole transitions are observed in the hydrogenic As acceptor series in ZnTe; transitions originating on the 2 P 5/2 or vibronic 1 S 3/2 + LO states are observed under similar conditions. These transitions give electron/hole temperatures at several hundred degrees at lattice temperatures of 1.6 K. Raman scattering from photoexcited excitions is observed and analyzed in p ‐InSb.