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Raman scattering of light by magnon‐spin flip excitations in antiferromagnetic semiconductors
Author(s) -
Stasch A.
Publication year - 1976
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250050206
Subject(s) - condensed matter physics , antiferromagnetism , magnon , raman scattering , semiconductor , magnetic semiconductor , raman spectroscopy , spin flip , electron , ferromagnetism , spin (aerodynamics) , scattering , physics , chemistry , optics , quantum mechanics , thermodynamics
Estimates are given for the process by which the s – d exchange interaction may contribute to the Raman scattering due to the magnon–spin flip of the conduction electron processes in antiferromagnetic semiconductors. It is shown that for the typical values of the s – d exchange interaction integral, i.e. 0.01–0.1 eV, the extinction coefficient can be larger by two orders of magnitude than that in ferromagnetic semiconductors. The value of the extinction coefficient in antiferromagnetic semiconductors is found to be 10 −9 –10 −11 cm −1 sr −1 . It is also shown that the change of the value of an absorbed energy in an external magnetic field allows us to determine the gyromagnetic factor for the conduction electrons.