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Electronic Raman scattering by Germanium p ‐acceptors and luminescence in GaAs
Author(s) -
Scheuermann W.
Publication year - 1975
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250030112
Subject(s) - raman scattering , luminescence , germanium , raman spectroscopy , dopant , materials science , doping , analytical chemistry (journal) , scattering , epitaxy , chemistry , optoelectronics , optics , physics , nanotechnology , silicon , chromatography , layer (electronics)
The Raman spectrum of Germanium p ‐doped epitaxial GaAs layers ( p ∼ 1 × 10 16 cm −3 ) has been recorded at 300 and 5.5 K with a YA1G:Nd 3+ laser at 1.064 μm as exciting source. The special sample arrangement used to observe the Raman scattering from the 30 μm thin layers is described in detail. Raman scattering from neutral acceptor levels of the dopant Ge was observed at 5.5K at 230 cm −1 = 28.5 meV and at 248 cm −1 = 30.7 meV. Strong luminescence of the sample was also observed at 5K with two prominent peaks at 924.5 nm and 942.0 nm.