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Localized vibrations in GaP doped with Mn or As
Author(s) -
Haanstra J. H.,
Vink A. T.
Publication year - 1973
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1250010110
Subject(s) - raman spectroscopy , doping , impurity , ion , luminescence , band gap , materials science , molecular vibration , vibration , analytical chemistry (journal) , chemistry , physics , optoelectronics , optics , organic chemistry , chromatography , quantum mechanics
Abstract Raman lines in GaP doped with Mn (0.1 at %) or As (up to 10 at %) are reported and discussed. In GaP‐Mn an impurity mode is found which also is observed in the low temperature luminescence. In GaP‐As five additional lines are seen. From the identification and relative intensities of these lines conclusions are drawn concerning the clustering of As ions around Ga ions.