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Raman scattering probe of anharmonic effects in NiSi
Author(s) -
Donthu S. K.,
Tripathy S.,
Chi D. Z.,
Chua S. J.
Publication year - 2004
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/jrs.1164
Subject(s) - raman spectroscopy , raman scattering , anharmonicity , materials science , phonon , x ray raman scattering , softening , analytical chemistry (journal) , atmospheric temperature range , diffraction , scattering , condensed matter physics , optics , chemistry , composite material , thermodynamics , physics , chromatography
We report a systematic temperature‐dependent Raman scattering study of NiSi thin films. In agreement with the basic anharmonic theory, the strong Raman peak from NiSi at about 214 cm −1 shows phonon softening and broadening with an increase in the sample temperature. Comparative study of the temperature dependence of this first‐order Raman peak from NiSi powder and the film show that NiSi layers of thickness 15–90 nm are under tensile thermal stress. The results also show that the total phonon shift observed in the temperature range 80–500 K is independent of the silicide film thickness. We have also shown that Raman spectroscopy is a faster and more sensitive technique than x‐ray diffraction for phase identification in NiSi nanolayers, hence Raman scattering can be used as a valuable tool for in situ growth and process monitoring of nickel silicides. Copyright © 2004 John Wiley & Sons, Ltd.