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The surface charging effects in three‐dimensional simulation of the profiles of plasma‐etched nanostructures
Author(s) -
RadmilovićRadjenović M.,
Radjenović B.,
Savić M.
Publication year - 2011
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.798
Subject(s) - plasma , plasma etching , laplace transform , etching (microfabrication) , laplace's equation , electric field , particle (ecology) , surface (topology) , domain (mathematical analysis) , field (mathematics) , set (abstract data type) , materials science , computational physics , mechanics , computer science , nanotechnology , physics , geometry , mathematics , mathematical analysis , layer (electronics) , quantum mechanics , partial differential equation , geology , oceanography , pure mathematics , programming language
Particles and fields represent two major modeling paradigms in pure and applied science at all. Particles typically exist in a spatial domain and they may interact with other particles or with field quantities defined on that domain. A field, on the other hand, defines a set of values on a region of space. In this paper, a methodology and some of the results for three‐dimensional (3D) simulations that includes both field and particle abstractions are presented. In our studies, charging damage to a semiconductor structure during plasma etching is simulated by using 3D level set profile evolution simulator. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar + /CF 4 non‐equilibrium plasma etching of SiO 2 . Copyright © 2010 John Wiley & Sons, Ltd.