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Silicon planar detectors adapted to slow neutron detection
Author(s) -
Guardiola C.,
Fleta C.,
Lozano M.,
Pellegrini G.
Publication year - 2010
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.754
Subject(s) - neutron detection , neutron , detector , semiconductor detector , silicon , physics , nuclear physics , bonner sphere , neutron source , materials science , particle detector , neutron temperature , optics , optoelectronics , neutron cross section
Most neutron detectors use some type of conversion material to convert the incident neutrons into secondary charged particles, which can be detected inside the detector bulk afterwards. In these reactions, charged particles and recoil nuclei are emitted, with energies high enough to be distinguished from the gamma ray background. In this way, semiconductor detectors incorporating a layer of a neutron reactive material on top of the substrate can be used as neutron detectors. Based on their experience in the fabrication of radiation detectors, CNM‐IMB (National Center of Microelectronics in Barcelona, Spain) has started a new research line in solid‐state neutron detectors for imaging or dosimetry. The Geant4 Monte–Carlo simulation package has been used to predict the detection efficiency of planar silicon detectors with a neutron converter layer. At the same time, preliminary tests of silicon pad detectors covered with neutron converters have been carried out in the Autonomous University of Barcelona with a neutron source ( 241 Am‐Be). Copyright © 2010 John Wiley & Sons, Ltd.