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Modelling CoolMOSC3 transistor characteristics in SPICE
Author(s) -
Górecki Krzysztof,
Zarębski Janusz
Publication year - 2009
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.727
Subject(s) - spice , transistor model , transistor , electronic engineering , computer science , electrical engineering , engineering , voltage
In this paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE, are presented and investigated. These models are verified experimentally both for dc and ac device operating conditions. The advantages and drawbacks of the investigated models are shown and discussed. The device operating conditions, at which the models are of acceptable accuracy, are identified. Copyright © 2009 John Wiley & Sons, Ltd.