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Implementation of the symmetric doped double‐gate MOSFET model in Verilog‐A for circuit simulation
Author(s) -
Alvarado Joaquín,
Iñiguez Benjamin,
Estrada Magali,
Flandre Denis,
Cerdeira Antonio
Publication year - 2009
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.725
Subject(s) - computer science , range (aeronautics) , verilog , reduction (mathematics) , double gate , mosfet , code (set theory) , transistor , electronic engineering , materials science , computer hardware , electrical engineering , engineering , mathematics , field programmable gate array , programming language , voltage , geometry , set (abstract data type) , composite material
Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1×10 14 to 3×10 18 cm −3 . The model covers a wide range of technological parameters and includes short channel effects. It was validated for different devices using data from simulations, as well as measured in real devices. In this paper, we present the implementation in Verilog‐A code of this model, which allows its introduction in commercial simulators. The Verilog‐A implementation was optimized to achieve reduction in computational time, as well as good accuracy. Results are compared with data from 2D simulations, showing a very good agreement in all transistor operation regions. Copyright © 2009 John Wiley & Sons, Ltd.