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High‐frequency transmission through metallic single‐walled carbon nanotube interconnects
Author(s) -
Tahvili M. S.,
Jahanmiri S.,
Sheikhi M. H.
Publication year - 2009
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.713
Subject(s) - carbon nanotube , materials science , substrate (aquarium) , transmission line , doping , conductance , interconnection , metal , conductivity , transmission (telecommunications) , scattering , optoelectronics , nanotechnology , condensed matter physics , physics , telecommunications , optics , computer science , quantum mechanics , metallurgy , geology , oceanography
In this paper, high‐frequency transmission behavior of metallic single‐walled carbon nanotube (SWCNT) interconnects is investigated. The SWCNT is assumed to be lying over a doped Si substrate, in a transmission line configuration. A hybrid approach, combining quantum theory with classical distributed‐element model is utilized to predict dynamical performance of the metallic SWCNT as a nano transmission line. Several aspects of high‐frequency performance of such interconnect, including the effect of SWCNT length and substrate doping level, is studied. A novel modification is proposed to take damping mechanisms effect caused by the imperfect conductance of substrate into account. The results show that the impact of limited conductivity of the substrate determines the dynamical behavior of short SWCNTs; whereas in case of long nanotubes, damping effects that arise from scattering mechanisms are dominant. Copyright © 2009 John Wiley & Sons, Ltd.