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Modifications of the DC Raytheon–Statz model for SiC MESFETs
Author(s) -
Zarębski Janusz,
Bisewski Damian
Publication year - 2008
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.696
Subject(s) - mesfet , spice , transistor , electrical engineering , computer science , materials science , electronic engineering , optoelectronics , engineering , field effect transistor , voltage
In the paper the problem of modelling DC characteristics of SiC MESFETs is presented. Some modifications of the popular Raytheon–Statz model built‐in in SPICE are proposed. The original and the modified models are verified experimentally by comparison of the measured and simulated device characteristics. One of the two available today on the market SiC MESFETs–the transistor CRF24010 offered by Cree, Inc. is chosen for investigations. Copyright © 2008 John Wiley & Sons, Ltd.