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SPICE modelling of power Schottky diodes
Author(s) -
Zarębski Janusz,
Dąbrowski Jacek
Publication year - 2008
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.688
Subject(s) - schottky diode , silicon carbide , spice , diode , materials science , isothermal process , optoelectronics , metal–semiconductor junction , silicon , schottky barrier , power (physics) , engineering physics , electronic engineering , engineering , physics , metallurgy , thermodynamics
The paper concerns the problem of modelling of silicon and silicon carbide power Schottky diodes. The SPICE built‐in isothermal model of silicon diodes and the electrothermal model of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements. Copyright © 2008 John Wiley & Sons, Ltd.