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Comparing the MESFET and HEMT models for efficient circuit design
Author(s) -
Touhami R.,
Yagoub M. C. E.,
Baudrand H.
Publication year - 2007
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.641
Subject(s) - mesfet , high electron mobility transistor , nonlinear system , voltage , quadratic equation , electronic engineering , computer science , nonlinear model , electrical engineering , biological system , engineering , transistor , mathematics , physics , field effect transistor , biology , geometry , quantum mechanics
In this paper, the relative advantages of several widely used MESFET and HEMT models have been compared. The nonlinear behaviours of the Curtice quadratic, Curtice cubic, Statz, Materka, Rodriguez, and Chalmers models were investigated through their current–voltage–temperature characteristics. To better fit such characteristics, neural‐based models of MESFET and HEMT were generated using a Levenberg–Marquardt back‐propagation algorithm. Close agreement was observed between simulated results and experimental data. Copyright © 2007 John Wiley & Sons, Ltd.