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FETMOSS: a software tool for 2D simulation of double‐gate MOSFET
Author(s) -
Abdolkader Tarek M.,
Farouk Wael Fikry,
Omar O.A.,
Hassan Mahmoud Fathy Mahmoud
Publication year - 2006
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.613
Subject(s) - poisson's equation , mosfet , matlab , software , matrix (chemical analysis) , finite difference method , finite difference , boundary value problem , computer science , finite element method , transfer matrix method (optics) , transfer matrix , electronic engineering , computational science , engineering , mathematics , mathematical analysis , electrical engineering , transistor , physics , materials science , structural engineering , optoelectronics , voltage , composite material , computer vision , programming language , operating system
A software tool for the 2D simulation of double‐gate SOI MOSFET is developed. The developed tool is working under MATLAB environment and is based on the numerical solution of Poisson and Schrödinger equations self‐consistently to yield the potential, carrier concentrations, and current within the device. Compared to the already existing tools, the new tool uses finite elements method for the solution of Poisson equation, thus, the simulation of curved boundary structures becomes feasible. Another new feature of the tool is the use of transfer matrix method (TMM) in the solution of Schrödinger equation which was proven in a recent published paper that it gives more accurate results than the conventional finite difference method (FDM) when used in some regions of operation. According to the working conditions, the tool can toggle between FDM and TMM to satisfy the highest accuracy with the largest speed of simulation. The tool is named as FETMOSS (Finite Elements and Transfer matrix MOS Simulator). Copyright © 2006 John Wiley & Sons, Ltd.