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Explicit modelling of the double‐gate MOSFET with VHDL‐AMS
Author(s) -
Prégaldiny Fabien,
Krummenacher François,
Diagne Birahim,
Pêcheux François,
Sallese JeanMichel,
Lallement Christophe
Publication year - 2006
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.609
Subject(s) - mosfet , computation , vhdl ams , computer science , vhdl , electronic engineering , voltage , transistor , electrical engineering , algorithm , hardware description language , engineering , computer hardware , field programmable gate array
This paper presents a new compact model for the undoped, long‐channel double‐gate (DG) MOSFET under symmetrical operation. In particular, we propose a robust algorithm for computing the mobile charge density as an explicit function of the terminal voltages. It allows to greatly reduce the computation time without losing any accuracy. In order to validate the analytical model, we have also developed the 2D simulations of a DG MOSFET structure and performed both static and dynamic electrical simulations of the device. Comparisons with the 2D numerical simulations give evidence for the good behaviour and the accuracy of the model. Finally, we present the VHDL‐AMS code of the DG MOSFET model and related simulation results. Copyright © 2006 John Wiley & Sons, Ltd.