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Simulation of Si n‐MOS inversion layer with Schrödinger‐Poisson equivalent circuit model
Author(s) -
Li SzuJu,
Chang ChiaCherng,
Tsai YaoTsung
Publication year - 2006
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.600
Subject(s) - poisson distribution , inversion (geology) , equivalent circuit , schrödinger's cat , poisson's equation , schrödinger equation , mathematics , voltage , physics , mathematical analysis , quantum mechanics , paleontology , statistics , structural basin , biology
In this paper, a simplified method for solving the Schrödinger–Poisson equation set in a quantum mechanical (QM) simulation is presented. This method simplifies the conventional Schrödinger and Poisson equations and then converts the simplification equation into an equivalent circuit form. During the QM simulation, the equivalent circuit model can replace the Schrödinger and Poisson's equations. In the equivalent circuit, the node voltages are taken as wave functions, and the electron concentration in the MOS inversion layer can be easily presented by solving the Schrödinger–Poisson equivalent circuit model. The simulation results are presented to demonstrate the quantum effects in the MOS inversion layer. Copyright © 2006 John Wiley & Sons, Ltd.