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Non‐linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling
Author(s) -
Parvais B.,
Cerdeira A.,
Schreurs D.,
Raskin J.P.
Publication year - 2005
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.578
Subject(s) - intermodulation , silicon on insulator , mosfet , volterra series , electronic engineering , nonlinear system , third order , function (biology) , computer science , materials science , physics , transistor , engineering , optoelectronics , electrical engineering , silicon , cmos , amplifier , voltage , quantum mechanics , philosophy , theology , evolutionary biology , biology
The harmonic and intermodulation distortions of both fully‐depleted (FD) and partially‐depleted (PD) silicon‐on‐insulator (SOI) MOSFETs are studied. The analysis is based on the recently developed integral function method and the results are compared to a third‐order Volterra model of the MOSFET. This modelling helps us to understand the non‐linear mechanisms of the considered devices and to predict their frequency behaviour. The models are validated through large‐signal network analyser measurements. The devices performances are discussed. Copyright © 2005 John Wiley & Sons, Ltd.