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Channel noise enhancement in small geometry MOSFET and its influence on phase noise calculation of integrated voltage‐controlled oscillator
Author(s) -
Itoh Nobuyuki,
Kojima Kenji,
Ohguro Tatsuya
Publication year - 2005
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.576
Subject(s) - mosfet , voltage controlled oscillator , phase noise , noise (video) , flicker noise , nmos logic , channel length modulation , noise temperature , noise generator , electrical engineering , burst noise , materials science , physics , electronic engineering , optoelectronics , noise figure , voltage , cmos , engineering , transistor , computer science , amplifier , artificial intelligence , image (mathematics)
Channel noise enhancement due to MOSFET scaling and its influence on phase noise estimation of fully integrated VCO have been studied. The channel noise of MOSFET increases due to the hot electron effect of small geometry MOSFET is obvious. The channel noise coefficient, γ , of NMOS is 3.5 for 40‐nm gate length, 2.0 for 90‐nm gate length in spite of being ⅔ for long channels MOSFET. Simultaneously, calculation of phase noise of fully integrated VCO shows large difference using γ =⅔ because the part of noise performance of VCO gain‐cell depends on channel noise of MOSFET. Calculated phase noise showed good agreement with measured data when the optimum value of channel noise of MOSFET was adopted. Copyright © 2005 John Wiley & Sons, Ltd.