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Modelling of complex RF/wireless structures using computationally optimized time‐domain techniques
Author(s) -
Bushyager Nathan,
Dalton Edan,
Tentzeris Manos
Publication year - 2004
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.542
Subject(s) - time domain , computer science , wireless , domain (mathematical analysis) , key (lock) , dielectric , simulation , electronic engineering , materials science , telecommunications , engineering , optoelectronics , mathematics , mathematical analysis , computer security , computer vision
The modelling of RF integrated structures with fine metallic details using time‐domain simulators is addressed. The key features identified as difficulties in modelling metallic structures in these techniques are dielectric and metal loss and complexity of geometry. A method to model loss that involves the use of a quasi‐static simulator to identify correction factors that can be applied to a time domain simulator is presented. In addition, a novel MRTD subcell method is presented that can be used to simulate fine metallic structures and other subcell effects such as the presented correction factors. An example simulation of a finely detailed structure using this technique is presented. Copyright © 2004 John Wiley & Sons, Ltd.