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Physically based 2D compact model for power bipolar devices
Author(s) -
Igic P. M.,
Towers M. S.,
Mawby P. A.
Publication year - 2004
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.535
Subject(s) - insulated gate bipolar transistor , bipolar junction transistor , ambipolar diffusion , power semiconductor device , power (physics) , pulsed power , electrical engineering , diffusion , transistor , computer science , electronic engineering , engineering , physics , voltage , plasma , quantum mechanics , thermodynamics
The two‐dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double‐pulse switching test circuit. The compact model has been established to model a 4500V‐1500A flat pack TOSHIBA IEGT. Copyright © 2004 John Wiley & Sons, Ltd.