An adaptive remeshing technique based on hierarchical error estimates for simulation of semiconductor devices | Zendy

Yang Geng | Zendy; Wang Ruchuan | Zendy; Wang Shaodi | Zendy

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An adaptive remeshing technique based on hierarchical error estimates for simulation of semiconductor devices

Author(s) -

Yang Geng,

Wang Ruchuan,

Wang Shaodi

Publication year - 2004

Publication title -

international journal of numerical modelling: electronic networks, devices and fields

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.249

H-Index - 30

eISSN - 1099-1204

pISSN - 0894-3370

DOI - 10.1002/jnm.520

Subject(s) - mesfet , poisson's equation , computer science , semiconductor , poisson distribution , adaptive mesh refinement , viscosity , algorithm , mathematics , transistor , computational science , engineering , physics , electrical engineering , mathematical analysis , field effect transistor , statistics , quantum mechanics , voltage

We discuss first hierarchical error estimates and a criterion for mesh refinement. Then we describe briefly the hydrodynamic model of semiconductor model. Based on artificial viscosity technique about electron velocity, we propose to solve a Poisson equation to obtain a correction about mesh optimization. Finally, we simulate a GaAs MESFET's device with a gate of 0.3 µm length and give some discussions about numerical results. Copyright © 2004 John Wiley & Sons, Ltd.

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