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An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices
Author(s) -
Yang Geng,
Wang Shaodi,
Wang Ruchuan
Publication year - 2003
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.507
Subject(s) - generalized minimal residual method , discretization , convergence (economics) , diode , finite element method , mathematics , semiconductor device , residual , computer science , algorithm , physics , materials science , mathematical analysis , optoelectronics , thermodynamics , layer (electronics) , economics , composite material , economic growth
We investigate the application of preconditioned generalized minimal residual (GMRES) algorithm to the equations of hydrodynamic model of semiconductor devices. An introduction to such a model is presented. We use finite‐element method P 1 ‐ isoP 2 element to discretize the equations. A preconditioning technique is proposed. The CPU times are presented for n + ‐ n ‐ n + diodes and 0.25 μm gate length Si MESFETs by using the preconditioned GMRES algorithm and the GMRES algorithm. The numerical results show that the preconditioning technique accelerates effectively the velocity of convergence. Copyright © 2003 John Wiley & Sons, Ltd.