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An efficient algorithm for optimizing the electrical performance of HBTs
Author(s) -
Ahn Hyungkeun,
ElNokali M.,
Han DeukYoung
Publication year - 2003
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.504
Subject(s) - bipolar junction transistor , common emitter , heterojunction , heterojunction bipolar transistor , current (fluid) , range (aeronautics) , optoelectronics , heterostructure emitter bipolar transistor , transistor , materials science , algorithm , base (topology) , electronic engineering , computer science , electrical engineering , engineering , mathematics , voltage , mathematical analysis , composite material
A physical model for AlGaAs/GaAs heterojunction bipolar transistor with different emitter and base structures is proposed. The recombination currents in various depletion regions of the device are derived and are used to calculate the collector current in the range of 300–600 K. The theoretical predictions of the model are compared with the numerical and experimental data available in the literature. The model is used to derive an efficient algorithm that optimizes the device structure for a given unity current gain frequency and collector current. Copyright © 2003 John Wiley & Sons, Ltd.