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A termination structure of 2.5kV IGBT with field plate and semi‐resistive (SIPOS) layer
Author(s) -
Kim HyoungWoo,
Moon JinWoo,
Chung SangKoo
Publication year - 2003
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.503
Subject(s) - resistive touchscreen , voltage , insulated gate bipolar transistor , layer (electronics) , breakdown voltage , materials science , electrical engineering , ring (chemistry) , enhanced data rates for gsm evolution , blocking (statistics) , electric field , core (optical fiber) , optoelectronics , composite material , engineering , chemistry , physics , computer science , telecommunications , computer network , organic chemistry , quantum mechanics
A junction termination with a field plate combined with a semi‐resistive layer deposited on front oxide layer is proposed for the first time as a termination structure of a 2.5 kV IGBT which allows high forward blocking voltage. The voltage handling capability of the proposed structure is compared with that for the conventional multiful floating ring structure and verified by the two‐dimensional device simulator, MEDICI. The numerically calculated breakdown voltages are 2205 and 2471 V for the multiple floating ring and proposed structures, respectively, yielding 11.3% improvement in the breakdown voltage. The breakdown voltage can be enhanced to 2500 V for the proposed structure when a floating ring is located at the edge of the field plate under the oxide. Copyright © 2003 John Wiley & Sons, Ltd.