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Quasi‐analytic steady‐state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses
Author(s) -
Jungo Marc,
Erni Daniel,
Baechtold Werner
Publication year - 2003
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.490
Subject(s) - rate equation , vertical cavity surface emitting laser , diffusion , laser , steady state (chemistry) , current (fluid) , mechanics , laser diode rate equations , differential equation , optics , semiconductor laser theory , physics , intensity (physics) , materials science , computational physics , chemistry , quantum mechanics , thermodynamics , kinetics , injection seeder
We propose a new set of equations describing a cylindrical vertical cavity surface emitting laser (VCSEL) cavity under CW operation, based on the rate equations including lateral carrier diffusion. The only numerical step in the calculation consists in finding the roots of a polynomial expression. This model enables a quasi‐instantaneous calculation of the laser's light‐current characteristic, including such effects as spatial hole burning, current spreading, inhomogeneous optical intensity distribution, and diffusion losses. An analysis of the VCSELs threshold current and differential quantum efficiency is proposed, which illustrates the interplay between injected current profile and diffusion coefficient. Copyright © 2003 John Wiley & Sons, Ltd.