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Accurate model of In x Ga 1− x As y P 1− y /InP active waveguides for optimal design of switches
Author(s) -
Petruzzelli V.
Publication year - 2003
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.486
Subject(s) - beam propagation method , transverse plane , ridge , diffusion , traveling wave , charge (physics) , code (set theory) , physics , beam (structure) , optics , computer science , mathematics , engineering , mathematical analysis , refractive index , geology , structural engineering , paleontology , set (abstract data type) , thermodynamics , programming language , quantum mechanics
Both the longitudinal and transverse charge diffusion terms in the rate equations as well as the spreading effect of the injected charge in the active layer are taken into account for a complete model of active twin ridge InGaAsP/InP‐waveguides. A dedicated computer code, relying on an optimized beam propagation method (BPM) based on the method of lines (MoL–BPM), is written. The computer code is used for the optimal design of a travelling‐wave switch and to simulate the bidirectional propagation for the design of a Fabry–Perot switch. This last switch version is more compact with respect to the travelling wave (TW) version because a reduction of the switch length of about 20% is gained. Copyright © 2003 John Wiley & Sons, Ltd.