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A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
Author(s) -
J. GarcíaLoureiro Antonio,
LópezGonzález J. M.,
F. Pena Tomás
Publication year - 2003
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.482
Subject(s) - heterojunction bipolar transistor , bipolar junction transistor , computer science , discretization , solver , heterojunction , domain decomposition methods , transistor , parallel computing , finite element method , poisson's equation , computational science , electronic circuit simulation , simulation , electronic engineering , optoelectronics , electrical engineering , physics , mathematics , engineering , mathematical analysis , electronic circuit , voltage , thermodynamics , programming language
In this paper, we present a parallel three‐dimensional semiconductor device simulator for gradual heterojunction bipolar transistor. This simulator uses the drift‐diffusion transport model. The Poisson equation and continuity equations were discretized using a finite element method (FEM) on an unstructured tetrahedral mesh. Fermi–Dirac statistics is considered in our model and a compact formulation is used that makes it easy to take into account other effects such as the non‐parabolic nature of the bands or the presence of various subbands in the conduction process. Domain decomposition methods were tested to solve the linear systems. We have applied this simulator to a gradual heterojunction bipolar transistor (HBT), and we present some measures of the parallel execution time for several solvers and some electrical results. This code has been implemented for distributed memory multicomputers, making use of the MPI message passing standard library and a parallel solver library. Copyright © 2002 John Wiley & Sons, Ltd.