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Performance of adaptive dual‐dropping ILUT preconditioners in semiconductor dopant diffusion simulation
Author(s) -
Zhang Jun,
Pardhanani Anand L.,
Carey Graham F.
Publication year - 2001
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.424
Subject(s) - thresholding , integrator , diffusion , factorization , computer science , dopant , ode , selection (genetic algorithm) , mathematical optimization , dual (grammatical number) , algorithm , mathematics , materials science , physics , bandwidth (computing) , artificial intelligence , telecommunications , art , optoelectronics , literature , doping , image (mathematics) , thermodynamics
Preconditioning strategies based on incomplete LU factorization using thresholding with dual dropping (ILUT) are investigated for iterative solution of sparse linear systems arising in semiconductor dopant diffusion modelling. Of particular interest are questions associated with selection and adaption of threshold parameters with spatial resolution, timestep in the adaptive ODE integrator and the problem physics. We investigate these issues and carry out detailed numerical studies in one‐ and two‐dimensions for a representative phosphorus diffusion model. Guidelines for optimally selecting the threshold parameters are deduced from the results, and strategies for adaptive parameter selection are presented. Copyright © 2002 John Wiley & Sons, Ltd.