Premium
Evaluation of a stacked‐FET cell for high‐frequency applications (invited paper)
Author(s) -
Piacibello Anna,
Costanzo Ferdinando,
Giofré Rocco,
Quaglia Roberto,
Colantonio Paolo,
Pirola Marco,
Camarchia Vittorio
Publication year - 2021
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2881
Subject(s) - crosstalk , computer science , frequency band , stacking , electronic engineering , transistor , topology (electrical circuits) , electromagnetic simulation , voltage , electrical engineering , physics , engineering , telecommunications , bandwidth (computing) , nuclear magnetic resonance
This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two‐stage stacked‐FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good agreement is found between the electromagnetic simulations and the measured performance on the manufactured prototype, thus demonstrating that a successful voltage combining architecture can be obtained in the frequency range of interest with the selected topology, based on a symmetric fork‐like connection between the transistors. This proves the effectiveness of an appropriate electromagnetic simulation set‐up in correctly predicting the crosstalk, which typically affects this structure, leading to a correct stacking operation.