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A scalable electrothermal model using a three‐dimensional thermal analysis model for GaN‐on‐diamond high‐electron‐mobility transistors
Author(s) -
Li Youda,
Mao Shuman,
Fu Yu,
Xu Ruiming,
Yan Bo,
Zhang Yong,
Xu Yuehang
Publication year - 2021
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2875
Subject(s) - high electron mobility transistor , transistor , gallium nitride , materials science , optoelectronics , diamond , large signal model , amplifier , scalability , wafer , signal (programming language) , electronic engineering , thermal , computer science , physics , power (physics) , cmos , nanotechnology , electrical engineering , engineering , voltage , layer (electronics) , composite material , quantum mechanics , database , meteorology , programming language
A scalable eletrothermal model is necessary for a high‐power amplifier design for accurate accounting of thermal effects. Toward this end, this study presents a scalable large‐signal model of gallium‐nitride (GaN) high‐electron‐mobility transistors (HEMTs) on diamond substrates. First, a three‐dimensional (3D) thermal analysis model was established. Then, a modified eletrothemal expression was proposed to predict thermal effects including scalability. For validation, the proposed model was implemented into quasi‐physics zone division (QPZD) large‐signal model. Results show that the proposed model accurately predicts the I–V curves of devices with different gate widths, gate fingers, and ambient temperatures. Moreover, the results of the model are consistent with on‐wafer measurements of 2 × 125, 4 × 125, and 10 × 50 μm of GaN‐on‐diamond HEMTs, indicating that the proposed model accurately predicts the DC– IV curves, scattering parameters, and large‐signal performance. The findings of this study can be useful for designing microwave diamond–GaN HEMT circuits.