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From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit
Author(s) -
Osmanoglu Sinan,
Ozbay Ekmel
Publication year - 2021
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2859
Subject(s) - monolithic microwave integrated circuit , quad flat no leads package , cascode , low noise amplifier , materials science , noise figure , amplifier , electrical engineering , gallium nitride , high electron mobility transistor , transistor , optoelectronics , integrated circuit , smith chart , electronic engineering , cmos , engineering , impedance matching , layer (electronics) , electrical impedance , voltage , adhesive , composite material
This paper describes an air cavity quad‐flat no‐leads (QFN) over‐molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage QFN packaged GaN LNA MMIC achieves a bandwidth of 0.03–2.6 GHz with a typical gain of 11.5 dB and less than 1.5 dB noise figure. The low noise amplifier (LNA) design is based on a model of a concept transistor, the cascode transistor used in the design, that has not been fabricated previously. The concept transistor is fabricated for the first time along with the GaN LNA MMIC. The fabricated GaN LNA MMIC is housed in a 12‐lead 3 × 3 mm 2 air cavity QFN over‐molded plastic package and mounted on an application board. The measurements taken with the application board represent a good convergence with the design that is based on a concept transistor model. The measurement results and 50 Ω internal matching on both ports without the need for additional matching components make this LNA attractive for many applications.