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Microwave diamond devices technology: Field‐effect transistors and modeling
Author(s) -
Chen Zhihao,
Fu Yu,
Kawarada Hiroshi,
Xu Yuehang
Publication year - 2020
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2800
Subject(s) - diamond , microwave , optoelectronics , materials science , field effect transistor , transistor , semiconductor , monolithic microwave integrated circuit , engineering physics , electrical engineering , electronic engineering , engineering , voltage , cmos , telecommunications , amplifier , composite material
This paper provides an overview of the developments in microwave diamond field‐effect transistor (D‐FET) technologies. Due to the ultrawide‐bandgap and high carrier velocity and thermal conductivity of diamond, it is a potential candidate for microwave power devices with high output power and operating frequency. Here, the properties of semiconductor materials for microwave applications are described. Then, the mechanisms of various diamond FETs are detailed. In recent years, hydrogen‐terminated diamond metal‐oxide‐semiconductor field‐effect transistors (HD MOSFETs) have been widely studied for their potential use in microwave power devices. Therefore, the structures and developments of HD MOSFETs are mainly discussed. Finally, in the prospective application of the HD FET microwave circuit, the state‐of‐the‐art large‐signal modeling of HD MOSFETs is presented.