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An energy‐efficient data‐dependent low‐power 10T SRAM cell design for LiFi enabled smart street lighting system application
Author(s) -
Gupta Neha,
Sharma Vishal,
Shah Ambika P.,
Khan Sajid,
Huebner Michael,
Vishvakarma Santosh K.
Publication year - 2020
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2766
Subject(s) - voltage , static random access memory , computer science , electrical engineering , solar cell , cmos , power (physics) , leakage (economics) , embedded system , engineering , physics , quantum mechanics , economics , macroeconomics
The LiFi enabled smart street lighting system requires the adaptive SoC to save huge amount of power/energy for data storage, which plays an important role for any urban area development. For the above application, an energy‐efficient data‐dependent power supplied 10T SRAM cell with half‐select free read‐decoupled circuit is designed to boost stability while stacking effect controls the leakage current against the process‐voltage‐temperature variations. CMOS 65 nm technology node is used for the implementation and comparison of various SRAM cells. The proposed cell offers 4×, 1.15×, and 1.66× higher read, hold, and write stability, respectively, as compared with the 6T cell at 0.4 V supply voltage. The improvement of write, read, and leakage power of the proposed 10T cell are 98.03%, 56.25%, and 91.07%, respectively, as compared with the 6T cell at 0.2 V supply. It is also observed that the proposed 10T cell has 88.88% and 85.71% write 0 and write 1 energy, respectively, as compared with the 6T cell at 0.2 V supply voltage. To better assess the cell, we introduced the figure of merit (FOM) and observed that the FOM of the proposed cell is 125× higher as compared with the 6T cell at 0.4 V supply voltage.