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A broadband small‐signal model extraction methodology over 0.2‐220 GHz for bulk FinFETs in RF CMOS technology
Author(s) -
Zhou Wenyong,
Liu Jun,
Chen Zhanfei,
Sun Lingling
Publication year - 2020
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2712
Subject(s) - parasitic extraction , transistor , cmos , small signal model , broadband , electronic engineering , radio frequency , signal (programming language) , interconnection , transistor model , frequency band , materials science , scattering parameters , equivalent circuit , electrical engineering , optoelectronics , computer science , engineering , telecommunications , voltage , antenna (radio) , programming language
This study presents a physical‐based broadband radio frequency (RF) small‐signal equivalent circuit model (ECM) for triple‐gate (TG) bulk fin field‐effect transistors (FinFETs) and its extraction methodology. To increase model accuracy and extend the effective frequency band, substrate effect, test ground‐signal‐ground (G‐S‐G) pads, and metal interconnection parasitics are considered together in the transistor model. All the elements in the model are extracted from a combination of analysis and physical equations using multibias scattering parameters. On the basis of the proposed model, the simulation results correspond to the measured results in the frequency range from 200 MHz to 220 GHz without any complex fitting or optimization steps.