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Modeling the impact of fundamental and quantum resistance on the performance of SWCNT‐based RLC interconnects
Author(s) -
Jadav Sunil,
Chandel Rajeevan,
Vashishath Munish
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2698
Subject(s) - rlc circuit , carbon nanotube , spice , materials science , quantum capacitance , harmonics , inductance , overshoot (microwave communication) , fourier transform , equivalent series resistance , fourier series , interconnection , electronic engineering , voltage , computer science , nanotechnology , capacitor , physics , electrical engineering , engineering , mathematics , telecommunications , transistor , quantum mechanics , mathematical analysis
An analytical interconnect model for single‐walled carbon nanotube (SWCNT) interconnects is proposed using Fourier method. Nonapproximated transfer function of the RLC SWCNT interconnect is modeled. The effect of fundamental and quantum resistance of SWCNT is incorporated in the transfer function. The propagation delay and overshoot/undershoot voltages are computed using Fourier series technique for SWCNT interconnects. Further, the effect of inductance that is prominent in CNTs is shown in terms of increased number of harmonics. Comparative analysis is carried out for SWCNT and Cu interconnects using MATLAB and SPICE at 65‐nm technology node for various performance parameters. Good accuracy is observed between the analytical and simulated results.