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Exploring the impedance coverage limitation at current generate plane of transistors up to millimeter‐wave band based on comprehensive large signal model
Author(s) -
Chen Yang,
Xu Yuehang,
Xu Ruimin
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2665
Subject(s) - harmonics , extremely high frequency , amplifier , transistor , harmonic , electrical impedance , electrical engineering , frequency band , electronic engineering , physics , acoustics , engineering , optics , antenna (radio) , cmos , voltage
The harmonic power amplifiers (PAs) have potential to be used in the millimeter‐wave band, but the sophisticate parasitic network effects on the projection of reflection coefficient coverage from transistor package (TP) plane to current generator (CG) plane is an important challenge. In this work, every typical parasitic element with unique effect is derived theoretically. Thus, in the millimeter‐wave band, the reduced and rotated projection of parasitic network between the two planes becomes clear. The fundamental frequency (20 GHz), second harmonics (40 GHz), and third harmonics (60 GHz) load‐pull simulations using the commercial standard nonlinear transistor modeling are simulated. The simulation and derivation are consistent and show that output power and efficiency become less sensitive to harmonic tuning due to the lossy parasitic network. This work will be helpful for harmonic tuned transistor and PA design in the millimeter‐wave band, in the future.