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Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs
Author(s) -
Zhang Meng,
Ma Xiaohua,
Mi Minhan,
Yang Ling,
Wu Sheng,
Hou Bin,
Zhu Qing,
Zhang Hengshuang,
Wu Mei,
Hao Yue
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2641
Subject(s) - fin , materials science , optoelectronics , transistor , voltage , electrical engineering , engineering , composite material
Abstract In this paper, a systematic theoretical study on the fin‐shaped AlGaN/GaN HEMTs with trigate structure and dual‐gate structure is performed by TCAD simulation. The influence of different gate structures and fin width on the DC performance of the fin‐shaped AlGaN/GaN high electron mobility transistors (HEMTs) are mainly studied and compared. A simplified physical analysis of the influence of fin width and gate structure on the threshold voltage is made.