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Sheet‐carrier density and I‐V analysis of In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As dual channel double gate HEMT for THz applications
Author(s) -
R. Poornachandran,
N. Mohankumar,
R. Saravana Kumar,
G. Sujatha
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2625
Subject(s) - transconductance , high electron mobility transistor , optoelectronics , terahertz radiation , materials science , transistor , electron mobility , current density , threshold voltage , scaling , electrical engineering , voltage , physics , geometry , mathematics , quantum mechanics , engineering
This paper gives a comprehensive detail about an emerging InAs high electron mobility transistor (HEMT) technology with proper material combination making it suitable for low‐power and high‐frequency applications. Over the decade, various material combinations were adopted to improve the sheet‐carrier density and frequency performances. In this work, we report the performance and optimization of 30‐nm gate length InAs‐based dual channel double gate (DCDG) HEMT for terahertz application. The dual channel is formed in the device due to the combination of five layers (In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As) and thus provides a significant improvement in drain current and transconductance. Moreover, the gate scaling with optimized gate to drain‐side recess length of gate (L rd ) leads to reduced parasitic (C gg ) and tremendously increases the RF performance metrics f max and f T . For this device, high drain current of 2.203 mA/μm with peak transconductance of 4.77 mS/μm is observed. Further optimization of L rd results in peak f T of 810 GHz and f max of 900 GHz at a drain source voltage V ds = 0.5 V. These parameters empower a feasibility of the device for submillimeter as well as terahertz applications.