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A millimeter‐wave scalable small signal model of RF CMOS transistor against number of fingers
Author(s) -
Bashir Muhammad Adil,
Wu Yunqiu,
Liu Jun,
Zhao Chenxi,
Tang Hongyan,
Kang Kai
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2608
Subject(s) - cmos , transistor , scalability , extremely high frequency , materials science , scaling , electronic circuit , optoelectronics , signal (programming language) , electronic engineering , electrical engineering , physics , mathematics , computer science , engineering , optics , voltage , database , programming language , geometry
A scalable small signal model for RF CMOS transistor is presented in this paper. The model consists of interconnects, substrate network, and intrinsic parameters. The proposed scaling rules characterize the transistors with different numbers of fingers. Based on this, the bias dependency, linear, and nonlinear behavior of all parasitic components are evaluated. A set of scalable RF CMOS models are validated by fabricating in the 90‐nm CMOS process, with gate width of 650 × 8 nm, 650 × 16 nm, 650 × 32 nm, and 650 × 64 nm, respectively. Further, the validity of the proposed model is carried out by comparing the calculated and measured results under different bias conditions up to 66 GHz. The root mean square errors calculated between measured and calculated results are within 0.0110 for S 11 , 0.0036 for S 12 , 0.0388 for S 21 , and 0.0106 for S 22 , respectively. A fairly good agreement predicts that the model is simple, scalable, and conducive for millimeter‐wave circuits.