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An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology
Author(s) -
Yang Jie,
Wang Lei,
Li Lang,
Zhan Jie,
Xie Yi Fu,
Zhan Ming Zhou
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2605
Subject(s) - cascode , amplifier , distributed amplifier , electrical engineering , rf power amplifier , high electron mobility transistor , materials science , power added efficiency , fet amplifier , linear amplifier , direct coupled amplifier , optoelectronics , electronic engineering , transistor , engineering , operational amplifier , cmos , voltage
A DC‐30GHz ultra‐wideband distributed amplifier based on the 0.15‐um GaAs process is proposed and characterized. The distributed amplifier has nine power amplifying units with a cascode structure. The measured results show that the amplifier has 16‐dB gain in the frequency range of DC‐30GHz. The output power of 1‐dB compression point is 19 dBm at 10 GHz, and the saturated output power is 25 dBm. The chip size is 3× 1.2 mm.