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Modeling and computation of double drift region transit time diode performance based on graphene‐SiC
Author(s) -
Ghivela Girish Chandra,
Sengupta Joydeep
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2601
Subject(s) - silicon carbide , materials science , graphene , optoelectronics , diode , impatt diode , depletion region , signal (programming language) , space charge , substrate (aquarium) , voltage , electrical engineering , physics , semiconductor , nanotechnology , computer science , engineering , electron , oceanography , quantum mechanics , geology , metallurgy , programming language
We have proposed a double drift region (DDR) Impact Avalanche Transit Time (IMPATT) diode based on graphene‐silicon carbide (SiC) substrate. Due to attractive and extensive electronics properties of graphene materials, for the first time, we have modeled and designed the diode on epitaxially grown graphene deposited on the silicon face of SiC. The direct current (DC) characteristics and small signal performance of the modeled diode are computed with the help of COMSOL Multi Physics and MATLAB software tools. Performance is evaluated at the frequency regime of Ka band. The proposed diode is validated through the boundary conditions. Profiles of electric field distribution, density of mobile space charge, conversion efficiency, power density, susceptance‐conductance, and voltage drops at different zones are obtained. The graphene‐SiC–based DDR IMPATT is giving better DC and small signal performances.