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A novel method to dynamic thermal impedance and channel temperature extraction of GaN HEMTs
Author(s) -
Wang Liu,
Liu Jun,
Zhou Wenyong,
Xu Zhongchao,
Wu Yuanyuan,
Tao Hongqi
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2599
Subject(s) - high electron mobility transistor , materials science , transistor , electrical impedance , thermal , thermal resistance , node (physics) , nonlinear system , optoelectronics , power (physics) , electronic engineering , electrical engineering , acoustics , engineering , physics , thermodynamics , voltage , quantum mechanics
An improved method to extract dynamic thermal impedance for power transistor is proposed, and the nonlinear thermal effect is considered. A novel model to characterize transistor dynamic thermal impedance is established. A four‐node R‐L network is attached in model to characterize self‐heating. And the method to extract model parameters is given. A constant m is defined to judge the change of thermal impedance with temperature. Thermal impedance Z th can be solved through rigorous mathematical calculation. This model is validated by using an AlGaN/GaN HEMT device under different measurement conditions, which demonstrates its potential to characterize the complete dynamic self‐heating behaviors for power transistors.