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A 27.5‐43.5 GHz 65‐nm CMOS up‐conversion mixer with 0.42 dBm OP 1dB for 5G applications
Author(s) -
Chen Zhilin,
Liu Zhiqing,
Jiang Zhengdong,
Liu Pengxue,
Yu Yiming,
Liu Huihua,
Wu Yunqiu,
Zhao Chenxi,
Kang Kai
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2550
Subject(s) - balun , dbm , wideband , transconductance , cmos , local oscillator , electrical engineering , resonator , radio frequency , intermediate frequency , materials science , frequency mixer , optoelectronics , gilbert cell , linearity , noise figure , voltage , engineering , transistor , amplifier , antenna (radio)
A 27.5‐ to 43.5‐GHz up‐conversion mixer is presented for fifth‐generation (5G) applications in 65‐nm CMOS process. A two‐path transconductance stage (TPTS) is demonstrated to improve the linearity. Compared with the conventional common‐source stage, this method enhances the output 1‐dB compression point (OP 1dB ) by 3.45 dB only at a cost of 1‐mW extra power. Moreover, the input and output baluns are using the fourth‐order transformer‐based resonators to realize a wideband impendence matching. With a power consumption of 14 mW, the proposed up‐conversion mixer achieves OP 1dB of 0.42 dBm at 38 GHz. Simultaneously, the maximum conversion gain of −5 dB, local oscillator (LO)‐to‐intermediate frequency (IF) isolation of 43 dB and LO‐to‐radio frequency (RF) isolation of 40 dB are obtained.