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Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method
Author(s) -
Kandasamy Sowmya,
N.B. Balamurugan
Publication year - 2019
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2546
Subject(s) - transistor , poisson's equation , threshold voltage , boundary value problem , dual (grammatical number) , materials science , voltage , electron mobility , field effect transistor , finite difference method , electric field , electron , technology cad , metal gate , mosfet , work (physics) , computational physics , optoelectronics , mathematical analysis , physics , mathematics , gate oxide , engineering , quantum mechanics , art , literature , engineering drawing , cad
A model for a dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor has been developed by a finite difference method. The method permits the modeling of dual material as two individual single materials by splitting the 2‐D Poisson equation into two separate 1‐D equations. The unified model of two separate 1‐D equations is formed by applying the boundary conditions. The proposed model estimates the surface potential, electric field, threshold voltage, and drain current by considering the work functions of two metal gates, their length difference, and applied drain voltage. The accuracy of the model can be verified using Technology Computer‐Aided Design (TCAD) simulations.